We examine the magnetic-field-driven insulator–quantum-Hall–insulator transitions of the two-dimensional hole gas in a Ge/SiGe quantum well. We observe direct transitions between low and high magnetic-field insulators and the ν=1 quantum Hall state. With increasing magnetic field, the transitions from insulating to quantum Hall and quantum Hall to insulating are very similar with respect to their transport properties. We address the temperature dependence around the transitions and show that the characteristic energy scale for the high-field transition is larger.
The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs∕AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.
In this work we address experimentally a number of unresolved issues related to microwave induced resistance oscillations (MIROs) leading to the zero-resistance states observed recently on 2D electron gases in GaAs∕AlGaAs heterostructures. We stress the importance of the electrodynamic effects detected in both reflection and absorption experiments, although they are not revealed in transport experiments on very high mobility samples. We also study the exact waveform of MIROs and their damping due to temperature. A simple equation is given, which can be considered as phenomenological, which describes precisely the experimental MIROs waveform. The waveform depends only on a single parameter—the width of the Landau levels, which is related to the quantum lifetime. A very good correlation was found between the temperature dependencies of the quantum lifetime from MIROs and the transport scattering time from the electron mobility with a ratio τtr∕τq≃20. It is found that the prefactor in the equation for MIROs decays as 1∕T2 with the temperature which can be explained within the distribution function model suggested by Dmitriev . The results are compared with measurements of the Shubnikov–de Haas oscillations down to 30 mK on the same sample.