Physical Society Colloquium

In the quest for new paradigms to succeed the current MOSFET technology when it reaches its limit of miniaturization, quantum dot-based devices, especially Si, are seen as a valuable candidate. However, little is known about the electronic properties and transport in such devices. A unique combination of small size, strong confinement and our ability to perform transport measurements places Si QDs in a different class from conventionally studied gate-confined or self-assembled dots, and detailed studies reveal interesting and, sometimes, unexpected physics. Determination of electron spin configuration, spin valve effects, spin blockade, magnetic field induced angular momentum, and coherent transport through quantum dot dimer, is a partial list of the diverse phenomena to be discussed.

Friday, October 26th 2001, 15:30
Ernest Rutherford Physics Building, Keys Auditorium (room 112)